Patent · US Active

Lithography systems and methods of manufacturing using thereof

US8715909B2 · kind B2 · utility

2Cited by

52References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alois Gutmann · Poughkeepsie, US
Henning Haffner · Pawling, US
Sajan Marokkey · Wappingers Falls, US
Chandrasekhar Sarma · Poughkeepsie, US
Roderick Koehle · Ottobrunn, DE

Key dates

Filing date	Oct 5, 2007
Grant date	May 6, 2014
Priority date	—
Expiry date	Aug 4, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70283
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.