Combined conductive plug/conductive line memory arrays and methods of forming the same

US8716059B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Roberto Somaschini · Vimercate, IT
• Fabio Pellizzer · Boise, US
• Carmela Cupeta · Milano, IT
• Nicola Nastasi · Messina, IT

Key dates

• Filing date: Feb 2, 2012
• Grant date: May 6, 2014
• Expiry date: Feb 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.