Semiconductor device manufacturing method and semiconductor device
US8716114B2 · kind B2 · utility
36Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Feb 14, 2013 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Feb 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.