Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline

US8716116B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Kunal R. Parekh · Boise, US
• Ceredig Roberts · Boise, US
• Thy Tran · Boise, US
• Jim A. Jozwiak · Boise, US
• David K. Hwang · Boise, US

Key dates

• Filing date: Mar 10, 2010
• Grant date: May 6, 2014
• Expiry date: Jul 31, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate.