Metal alloy cap integration

US8716127B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chih-Chao Yang · Glenmont, US
• Marc A. Bergendahl · Troy, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Shom Ponoth · Irvine, US

Key dates

• Filing date: May 11, 2013
• Grant date: May 6, 2014
• Expiry date: May 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76882
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metal interconnect structure, which includes metal alloy capping layers, and a method of manufacturing the same. The originally deposited alloy capping layer element within the interconnect features will diffuse into and segregate onto top surface of the metal interconnect. The metal alloy capping material is deposited on a reflowed copper surface and is not physically in contact with sidewalls of the interconnect features. The metal alloy capping layer is also reflowed on the copper. Thus, there is a reduction in electrical resistivity impact from residual alloy elements in the interconnect structure. That is, there is a reduction, of alloy elements inside the features of the metal interconnect structure. The metal interconnect structure includes a dielectric layer with a recessed line, a liner material on sidewalls, a copper material, an alloy capping layer, and a dielectric cap.