Patent · US Active

Method of forming a semiconductor structure including a wet etch process for removing silicon nitride

US8716136B1 · kind B1 · utility

0Cited by

0References

19Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Berthold Reimer · Dresden, DE
Johannes von Kluge · Dresden, DE
Sven Beyer · Dresden, DE

Key dates

Filing date	Oct 19, 2012
Grant date	May 6, 2014
Priority date	—
Expiry date	Oct 19, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method disclosed herein includes providing a semiconductor structure comprising a transistor, the transistor comprising a gate electrode and a silicon nitride sidewall spacer formed at the gate electrode. A wet etch process is performed. The wet etch process removes at least a portion of the silicon nitride sidewall spacer. The wet etch process comprises applying an etchant comprising at least one of hydrofluoric acid and phosphoric acid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.