Method for manufacturing semiconductor device
US8716144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2010 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.