Method of forming a low-K dielectric film
US8716150B1 · kind B1 · utility
1Cited by
6References
20Claims
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Key dates
| Filing date | Apr 11, 2013 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Apr 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device are provided. The methods include, for example, forming a low-k dielectric having a continuous planar surface, and, after forming the low-k dielectric, subjecting the continuous planar surface of the low-k dielectric to an ethylene plasma enhanced chemical vapor deposition (PECVD) treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.