Semiconductor device with self-charging field electrodes

US8716788B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans Weber · Villach, AT
• Franz Hirler · Isen, DE
• Stefan Gamerith · Villach, AT

Key dates

• Filing date: Sep 30, 2011
• Grant date: May 6, 2014
• Expiry date: Dec 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region.