Process of treating defects during the bonding of wafers
US8722515B2 · kind B2 · utility
3Cited by
0References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2013 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Aug 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.