Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure

US8722523B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Till Schloesser · Dresden, DE
• Peter Baars · Dresden, DE
• Frank Jakubowski · Dresden, DE

Key dates

• Filing date: Feb 10, 2012
• Grant date: May 13, 2014
• Expiry date: Mar 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming sophisticated semiconductor devices including high-k metal gate electrode structures, a raised drain and source configuration may be used for controlling the height upon performing a replacement gate approach, thereby providing superior conditions for forming contact elements and also obtaining a well-controllable reduced gate height.