Integrated circuit made out of SOI with transistors having distinct threshold voltages

US8723267B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Olivier Thomas · Saint-Martin-d'Hères, FR
• Jean-Philippe Noel · Meylan, FR

Key dates

• Filing date: Apr 1, 2010
• Grant date: May 13, 2014
• Expiry date: May 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

The invention relates to an integrated circuit including an active semiconducting layer separated from a semiconducting substrate layer by an embedded insulating material surface, including: first and second transistors (205, 213) of a single type; first and second floorplans arranged vertically perpendicular to the first and second transistors; wherein the first transistor has a doping of the floorplan thereof, opposite that of the source thereof, and a first threshold voltage; the second transistor has a doping of the floorplan thereof, identical to that of the source thereof, and a second threshold voltage; the first threshold voltage is dependent on the potential difference applied between the source and the floorplan of the first transistor; and the second threshold voltage is dependent on the potential difference applied between the source and the floorplan of the second transistor.