Linear stage and metrology architecture for reflective electron beam lithography
US8724115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2013 |
| Grant date | May 13, 2014 |
| Priority date | — |
| Expiry date | Jun 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30438
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.