Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts
US8728930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.