Semiconductor device structures and memory devices including a uniform pattern of conductive material
US8729708B2 · kind B2 · utility
3Cited by
7References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor device structures are disclosed. One method comprises forming a plurality of loops of a conductive material. Each loop of the plurality of loops comprises a uniform pattern. In one embodiment, a portion of the conductive material is removed from at least one location in each loop of the plurality of loops. Contacts are formed to the conductive material. A semiconductor device structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.