Performing forming processes on resistive memory
US8730708B2 · kind B2 · utility
9Cited by
11References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | May 20, 2014 |
| Priority date | — |
| Expiry date | Jun 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.