Film deposition method and apparatus
US8734901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.