Memory cell constructions, and methods for fabricating memory cell constructions

US8735216B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jun Liu · 红钢城街道, CN
• Jian Li · Boise, US

Key dates

• Filing date: Feb 9, 2013
• Grant date: May 27, 2014
• Expiry date: Feb 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material. A retaining shell may be formed adjacent the programmable material. The memory cell may be thermally processed to increase a temperature of the memory cell to at least about 300° C., causing thermally-induced stress within the memory cell. The retaining shell may provide a stress which substantially balances the thermally-induced stress. Some embodiments include memory cell constructions. The constructions may include programmable material directly against silicon nitride that has an internal stress of less than or equal to about 200 megapascals. The constructions may also include a retaining shell silicon nitride that has an internal stress of at least about 500 megapascals.