Semiconductor device devoid of an interfacial layer and methods of manufacture
US8735244B2 · kind B2 · utility
2Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Sep 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric stack devoid of an interfacial layer includes subjecting an exposed interfacial layer provided on a semiconductor material to a low pressure thermal anneal process for a predetermined time period at a temperature of about 900° C. to about 1000° C. with an inert gas purge. A semiconductor structure is also disclosed, with a dielectric stack devoid of an interfacial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.