Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer
US8735296B2 · kind B2 · utility
13Cited by
21References
25Claims
0Family size
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Key dates
| Filing date | Jul 18, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming multiple different width dimension features simultaneously. The method includes forming multiple sidewall spacers of different widths formed from different combinations of conformal layers on different mandrels, removing the mandrels, and simultaneously transferring the pattern of the different sidewall spacers into an underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.