Methods and layers for metallization
US8736055B2 · kind B2 · utility
8Cited by
11References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the present invention is a method of making an electronic device. According to one embodiment, the method comprises depositing a cap layer containing at least one dopant onto a gapfill metal and annealing so that the at least one dopant migrates to grain boundaries and/or interfaces of the gapfill metal. Another aspect of the present invention is an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.