Patent · US Active

Thermalization of gaseous precursors in CVD reactors

US8741385B2 · kind B2 · utility

2Cited by

18References

18Claims

0Family size

Assignee

SOITEC · FR

Inventors

Chantal Arena · Mesa, US
Christiaan J. Werkhoven · Gilbert, US
Ronald Thomas Bertram, JR. · Mesa, US
Ed Lindow · Scottsdale, US

Key dates

Filing date	Jan 28, 2013
Grant date	Jun 3, 2014
Priority date	—
Expiry date	Jan 28, 2033

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B25/105
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.