Method for separating photomask pattern
US8741507B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for separating photomask pattern, including the following steps: first, a layout pattern is provided, wherein the layout pattern is defined to have at least one critical pattern and at least one non-critical pattern. Then, a first split process is performed to separate the critical pattern into a plurality of first patterns and a plurality of second patterns. A second split process is performed to separate the non-critical pattern into a plurality of third patterns and a plurality of fourth patterns. Finally, the first patterns and the third patterns are output to a first photomask, and the second patterns and the fourth patterns are output to a second photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.