Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment

US8741787B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ulrich Mayer · Weißenhorn, DE
• Hartmut Ruelke · Dresden, DE
• Christof Streck · Coswig, DE

Key dates

• Filing date: Jul 23, 2010
• Grant date: Jun 3, 2014
• Expiry date: Jan 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76825
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon-based low-k dielectric material is formed on the basis of a single precursor material, such as OMTCS, without incorporating a porogen species. To this end, the initial deposition of the low-k dielectric material may be formed on the basis of a reduced process temperature, while a subsequent treatment, such as a UV treatment, may allow the adjustment of the final material characteristics without causing undue out-gassing of volatile organic components.