Apparatus and method for improving the intensity profile of a beam image used to process a substrate
US8742286B1 · kind B1 · utility
2Cited by
16References
3Claims
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Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.