Patent · US Active

Deposition methods for the formation of III/V semiconductor materials, and related structures

US8742428B2 · kind B2 · utility

0Cited by
4References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 24, 2012
Grant dateJun 3, 2014
Priority date—
Expiry dateOct 24, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/811
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.