Method and system for forming high precision patterns using charged particle beam lithography
US8745549B2 · kind B2 · utility
1Cited by
8References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 5, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Feb 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.