Plasma source pumping and gas injection baffle
US8747610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | May 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.