Patent · US Active

Enhanced confinement of sensitive materials of a high-K metal gate electrode structure

US8748281B2 · kind B2 · utility

4Cited by

2References

1Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Jan Hoentschel · Dresden, DE
Sven Beyer · Dresden, DE
Thilo Scheiper · Dresden, DE
Uwe Griebenow · Markkleeberg, DE

Key dates

Filing date	Oct 19, 2010
Grant date	Jun 10, 2014
Priority date	—
Expiry date	Jan 1, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0133
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When forming sophisticated high-k metal gate electrode structures, the removal of a dielectric cap material may be accomplished with superior process uniformity by using a silicon dioxide material. In other illustrative embodiments, an enhanced spacer regime may be applied, thereby also providing superior implantation conditions for forming drain and source extension regions and drain and source regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.