Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
US8748283B2 · kind B2 · utility
3Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2013 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | May 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.