Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate

US8748285B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alan B. Botula · South Burlington, US
• William F. Clark, Jr. · South Burlington, US
• Richard A. Phelps · Colchester, US
• BethAnn Rainey · South Burlington, US
• Yun Shi · South Burlington, US
• James A. Slinkman · Montpelier, US

Key dates

• Filing date: Nov 28, 2011
• Grant date: Jun 10, 2014
• Expiry date: Jan 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor structure includes a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising a handle wafer, a buried oxide (BOX) layer on top of the handle wafer, and a top silicon layer on top of the BOX layer; and an implantation region located in the top silicon layer, the implantation region comprising a noble gas.