Methods of forming strained-semiconductor-on-insulator device structures
US8748292B2 · kind B2 · utility
10Cited by
259References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2005 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.