Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material

US8748297B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gudrun Stranzl · Eisenlohrsweg, AT
• Martin Zgaga · Rosegg, AT
• Markus Kahn · Rangersdorf, AT
• Guenter Denifl · Annenheim, AT

Key dates

• Filing date: Apr 20, 2012
• Grant date: Jun 10, 2014
• Expiry date: Apr 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/308
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.