Markus Kahn
29Patents
3h-index
43Co-inventors
59Inventor score
Filing activity: Jul 29, 2005 → May 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10710874B2 | Micromechanical structure and method for manufacturing the same | Electricity | 8 | Active |
| US9212045B1 | Micro mechanical structure and method for fabricating the same | Electricity | 4 | Active |
| US8200557B2 | Systems and methods for providing migration and performance matrices | Physics | 3 | Active |
| US7596520B2 | Systems and methods for general aggregation of characteristics and key figures | Physics | 3 | Active |
| US8748297B2 | Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material | Electricity | 3 | Active |
| US9511560B2 | Processing a sacrificial material during manufacture of a microfabricated product | Emerging Cross-Sectional Technologies | 3 | Active |
| US8095442B2 | Systems and methods for calculating specified matrices | Physics | 3 | Active |
| US8311918B2 | Systems and methods for calculating specified matrices | Physics | 2 | Active |
| US9257342B2 | Methods of singulating substrates to form semiconductor devices using dummy material | Electricity | 1 | Active |
| US8498917B2 | Systems and methods for providing migration and performance matrices | Physics | 1 | Active |
| US10629416B2 | Wafer chuck and processing arrangement | Electricity | 1 | Active |
| US10081533B2 | Micromechanical structure and method for fabricating the same | Electricity | 1 | Active |
| US9455136B2 | Controlling the reflow behaviour of BPSG films and devices made thereof | Electricity | 1 | Active |
| US9728480B2 | Passivation layer and method of making a passivation layer | Electricity | 0 | Active |
| US10858246B2 | Semiconductor device, microphone and methods for forming a semiconductor device | Electricity | 0 | Active |
| US9941111B2 | Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer | Electricity | 0 | Active |
| US11804415B2 | Semiconductor device with first and second portions that include silicon and nitrogen | Electricity | 0 | Active |
| US8150749B2 | Systems and methods for general aggregation of characteristics and key figures | Physics | 0 | Active |
| US10049879B2 | Self aligned silicon carbide contact formation using protective layer | Electricity | 0 | Active |
| US11387081B2 | Wafer chuck and processing arrangement | Electricity | 0 | Active |
| US11352253B2 | Semiconductor device, microphone and methods for forming a semiconductor device | Electricity | 0 | Active |
| US9478409B2 | Method for coating a workpiece | Electricity | 0 | Active |
| US9984915B2 | Semiconductor wafer and method for processing a semiconductor wafer | Electricity | 0 | Active |
| US10325803B2 | Semiconductor wafer and method for processing a semiconductor wafer | Electricity | 0 | Active |
| US11075134B2 | Semiconductor device with a portion including silicon and nitrogen and method of manufacturing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.