Patent · US Active

Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level

US8748302B2 · kind B2 · utility

6Cited by

1References

9Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Christopher M. Prindle · Poughkeepsie, US
Johannes Groschopf · Radebeul, DE
Andreas Ott · Erfurt, DE

Key dates

Filing date	Feb 21, 2012
Grant date	Jun 10, 2014
Priority date	—
Expiry date	Feb 21, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0133
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having superior gap filling capabilities and a second interlayer dielectric material that provides high etch resistivity and robustness during a planarization process. In this manner, undue material erosion upon replacing the placeholder material may be avoided, which results in reduced yield loss and superior device uniformity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.