Method and system for detecting or reviewing open contacts on a semiconductor device
US8748815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Aug 21, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.