Inventor · Los Altos Hills, CA, US

Jack Jau

55Patents
9h-index
64Co-inventors
81Inventor score

Filing activity: Mar 17, 1994 → Feb 14, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5502306A Electron beam inspection system and method Electricity 259 Expired
US5717204A Inspecting optical masks with electron beam microscopy Electricity 95 Expired
US6815345B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing Electricity 91 Expired
US8089297B2 Structure and method for determining a defect in integrated circuit manufacturing process Electricity 88 Active
US7105436B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing Electricity 83 Expired
US5665968A Inspecting optical masks with electron beam microscopy Electricity 72 Expired
US8748814B1 Structure for inspecting defects in word line array fabricated by SADP process and method thereof Electricity 61 Active
US8068662B2 Method and system for determining a defect during charged particle beam inspection of a sample Physics 39 Active
US10236156B2 Apparatus of plural charged-particle beams Electricity 12 Active
US8884224B2 Charged particle beam imaging assembly and imaging method thereof Electricity 8 Active
US6710342B1 Method and apparatus for scanning semiconductor wafers using a scanning electron microscope Electricity 7 Expired
US7919760B2 Operation stage for wafer edge inspection and review Electricity 6 Active
US8712184B1 Method and system for filtering noises in an image scanned by charged particles Electricity 5 Active
US8094924B2 E-beam defect review system Electricity 5 Active
US8294094B1 Method and apparatus for reducing substrate edge effect during inspection Electricity 4 Active
US6881956B1 Method and apparatus for scanning semiconductor wafers using a scanning electron microscope Electricity 4 Expired
US9282293B2 Method and system for measuring critical dimension and monitoring fabrication uniformity Physics 4 Active
US8010307B2 In-line overlay measurement using charged particle beam system Electricity 4 Active
US7474001B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing Electricity 4 Active
US8748815B2 Method and system for detecting or reviewing open contacts on a semiconductor device Physics 4 Active
US8432441B2 Method and system for measuring critical dimension and monitoring fabrication uniformity Physics 3 Active
US9041795B2 Method and system for measuring critical dimension and monitoring fabrication uniformity Physics 3 Active
US8692214B2 Charged particle beam inspection method Electricity 3 Active
US8606017B1 Method for inspecting localized image and system thereof Physics 3 Active
US9100553B2 Method and system for measuring critical dimension and monitoring fabrication uniformity Physics 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.