Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

US8748903B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Koji Kamei · Ichihara, JP
• Honglin Wang · Hikone, JP

Key dates

• Filing date: Oct 27, 2010
• Grant date: Jun 10, 2014
• Expiry date: Oct 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.