Method and system for fabricating floating guard rings in GaN materials

US8749015B2 · kind B2 · utility

Assignee

• Avogy, Inc. · US

Inventors

• Donald R. Disney · Cupertino, US
• Andrew P. Edwards · San Jose, US
• Hui Nie · Cupertino, US
• Richard J. Brown · Los Gatos, US
• Isik C. Kizilyalli · San Francisco, US
• David P. Bour · Cupertino, US
• Linda Romano · Sunnyvale, US
• Thomas R. Prunty · Santa Clara, US

Key dates

• Filing date: Nov 17, 2011
• Grant date: Jun 10, 2014
• Expiry date: Mar 22, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.