Resistive memory using SiGe material
US8750019B2 · kind B2 · utility
6Cited by
121References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.