Apparatus for growing high quality silicon single crystal ingot and growing method using the same
US8753445B2 · kind B2 · utility
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Key dates
| Filing date | Jul 5, 2007 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | May 28, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.