Heat shield for heater in semiconductor processing apparatus
US8753447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2009 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.