Etchant for controlled etching of Ge and Ge-rich silicon germanium alloys
US8753528B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 4, 2013 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.