Line width roughness improvement with noble gas plasma
US8753804B2 · kind B2 · utility
5Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2009 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Jan 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.