Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material
US8754446B2 · kind B2 · utility
0Cited by
80References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2006 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Feb 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The invention is directed to a structure and method of forming a structure having a sealed gate oxide layer. The structure includes a gate oxide layer formed on a substrate and a gate formed on the gate oxide layer. The structure further includes a material abutting walls of the gate and formed within an undercut underneath the gate to protect regions of the gate oxide layer exposed by the undercut. Source and drain regions are isolated from the gate by the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.