Semiconductor device having epitaxial layer
US8754448B2 · kind B2 · utility
12Cited by
79References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense region. The transistors are disposed in the iso region and the dense region respectively. Each transistor includes at least a source/drain region. The source/drain region includes a first epitaxial layer having a bottom thickness and a side thickness, and the bottom thickness is substantially larger than or equal to the side thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.