Hybrid active-field gap extended drain MOS transistor

US8754469B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Sameer Pendharkar · Allen, US
• John Lin

Key dates

• Filing date: Oct 25, 2011
• Grant date: Jun 17, 2014
• Expiry date: Nov 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended drain MOS transistor includes a gate having field plates over the field gap drift regions. The extended drain MOS transistor may be formed in a symmetric nested configuration. A process for forming an integrated circuit containing an extended drain MOS transistor provides parallel alternating active gap drift regions and field gap drift regions with a gate having field plates over the field gap drift regions.