Through-silicon via with a non-continuous dielectric layer
US8754531B2 · kind B2 · utility
1Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through-silicon via (TSV) includes an insulation layer continuously lining a straight sidewall of a recessed via feature; a barrier layer continuously covering the insulation layer; a first portion of a non-continuous seed layer disposed at one end of the recessed via feature; a non-continuous dielectric layer partially covering the straight sidewall of the recessed via feature; and a conductive layer filling the recessed via feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.