Patent · US Active

Silicon wafer and method for manufacturing the same

US8758505B2 · kind B2 · utility

0Cited by

17References

5Claims

0Family size

Assignee

Sumitomo Mitsubishi Silicon Corporation · JP

Inventors

Toshiaki Ono · Ebina, JP
Wataru Sugimura · Tokyo, JP
Masataka Hourai · Tokyo, JP

Key dates

Filing date	Mar 22, 2010
Grant date	Jun 24, 2014
Priority date	—
Expiry date	Mar 13, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3225
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.