Ion implantation apparatus and ion implantation method
US8759801B2 · kind B2 · utility
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Key dates
| Filing date | Oct 16, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.